6MBI50VA-120-50
IGBT Modules
IGBT MODULE (V series)
1200V / 50A / 6 in one package
Features
Compact Package
P.C.Board Mount
Low VCE (sat)
Applications
Inverter for Motor Drive
AC and DC Servo Drive Amplifier
Uninterruptible Power Supply
Industrial machines, such as welding machines
Maximum Ratings and Characteristics
Absolute Maximum Ratings (at Tc=25°C unless otherwise specified)
Items
Symbols
Inverter
Collector-Emitter voltage
Gate-Emitter voltage
Collector current
Collector power dissipation
Maximum junction temperature
Temperature under switching conditions
Storage temperature
Conditions
VCES
VGES
Ic
Icp
-Ic
-Ic pulse
Pc
Tjmax
Tjop
Tstg
Continuous
1ms
1ms
1 device
Isolation voltage
between terminal and copper base (*1)
Viso
between thermistor and others (*2)
AC : 1min.
Screw torque
Mounting (*3)
M5
-
Tc=80°C
Tc=80°C
Maximum
ratings
1200
±20
50
100
50
100
280
175
150
-40~+125
V
V
A
W
°C
2500
VAC
3.5
Nm
Note *1: All terminals should be connected together during the test.
Note *2: Two thermistor terminals should be connected together, other terminals should be connected together and shorted to base plate during the test.
Note *3: Recommendable value : 2.5-3.5 Nm (M5)
1
Units
6MBI50VA-120-50
IGBT Modules
Electrical characteristics (at Tj= 25°C unless otherwise specified)
Items
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Symbols
Conditions
I CES
I GES
VGE (th)
VGE = 0V, VCE = 1200V
VGE = 0V, VGE = ±20V
VCE = 20V, I C = 50mA
VCE (sat)
(terminal)
VGE = 15V
I C = 50A
Collector-Emitter saturation voltage
Inverter
VCE (sat)
(chip)
Input capacitance
Cies
ton
tr
tr (i)
toff
tf
Turn-on time
Turn-off time
VF
(terminal)
Tj=25°C
Tj=125°C
Tj=150°C
Tj=25°C
VGE = 15V
Tj=125°C
I C = 50A
Tj=150°C
VCE = 10V, VGE = 0V, f = 1MHz
VCC = 600V
I C = 50A
VGE = +15 / -15V
RG = 15Ω
Tj=25°C
Tj=125°C
Tj=150°C
Tj=25°C
Tj=125°C
Tj=150°C
I F = 50A
Forward on voltage
VF
(chip)
I F = 50A
trr
Resistance
R
B value
B
I F = ±20
T = 25°C
T = 100°C
T = 25 / 50°C
Items
Symbols
Conditions
Thermal resistance (1device)
Rth(j-c)
Contact thermal resistance (1device) (*4)
Rth(c-f)
Thermistor
Reverse recovery time
Characteristics
min.
typ.
max.
1.0
200
6.0
6.5
7.0
2.15
2.60
2.50
2.55
1.85
2.30
2.20
2.25
4.2
0.39
1.20
0.09
0.60
0.03
0.53
1.00
0.06
0.30
2.00
2.45
2.15
2.10
1.70
2.15
1.85
1.80
0.1
5000
465
495
520
3305
3375
3450
Units
mA
nA
V
V
nF
µs
V
µs
Ω
K
Thermal resistance characteristics
Characteristics
min.
typ.
max.
0.54
0.73
0.05
-
Inverter IGBT
Inverter FWD
with Thermal Compound
Note *4: This is the value which is defined mounting on the additional cooling fin with thermal compound.
Equivalent Circuit Schematic
[ Inverter ]
[ Thermistor ]
15,16
25,26
1
2
3
4
U
23,24
5
6
V
21,22
7
8
9
10
W
19,20
11
12
27,28
13,14
2
17
18
Units
°C/W
6MBI50VA-120-50
IGBT Modules
Characteristics (Representative)
[ Inverter ]
Collector current vs. Collector-Emitter voltage (typ.)
[ Inverter ]
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 25oC / chip
50
VGE=20V
15V
VGE=20V
12V
40
Collector current: IC [A]
Collector current: IC [A]
50
Tj= 150oC / chip
30
10V
20
10
15V
12V
40
30
10V
20
10
8V
8V
0
0
0
2
1
3
4
0
5
Collector-Emitter voltage: VCE[V]
125°C
4
5
8
150°C
40
30
20
10
0
6
4
Ic=50A
Ic=25A
Ic= 13A
2
0
0
1
2
3
5
4
5
10
Collector-Emitter voltage: VCE[V]
Collector - Emitter voltage: VCE [200V/div]
Gate - Emitter voltage:
VGE [5V/div]
10.0
Cies
1.0
Cres
0.1
Coes
0.0
10
20
30
20
25
[ Inverter ]
Dynamic gate charge (typ.)
Vcc=600V， Ic=50A，Tj= 25°C
VGE=0V, f= 1MHz, Tj= 25oC
0
15
Gate - Emitter voltage: VGE [V]
[ Inverter ]
Capacitance vs. Collector-Emitter voltage (typ.)
Capacitance: Cies, Coes, Cres [nF]
3
[ Inverter ]
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
Tj= 25oC / chip
Collector - Emitter voltage: VCE [V]
Collector current: IC [A]
Tj=25°C
2
Collector-Emitter voltage: VCE[V]
[ Inverter ]
Collector current vs. Collector-Emitter voltage (typ.)
VGE=15V / chip
50
1
40
VGE
VCE
0
Collector - Emitter voltage: VCE [V]
50
100
150
200
Gate charge: Qg [nC]
3
250
300
6MBI50VA-120-50
IGBT Modules
[ Inverter ]
Switching time vs. Collector current (typ.)
Vcc=600V，VGE=±15V，Rg=15Ω，Tj= 150°C
10000
1000
Switching time : ton, tr, toff, tf [ nsec ]
Switching time : ton, tr, toff, tf [ nsec ]
[ Inverter ]
Switching time vs. Collector current (typ.)
Vcc=600V，VGE=±15V，Rg=15Ω，Tj= 125°C
toff
ton
tr
100
tf
10
0
10
20
30
40
50
10000
1000
ton
tr
100
tf
10
60
0
Collector current: IC [A]
10000
toff
ton
tr
100
tf
10
10
20
30
40
Collector current: IC [A]
100
6
50
60
Eon(150°C)
Eon(125°C)
Eoff(150°C)
Eoff(125°C)
5
4
3
Err(150°C)
Err(125°C)
2
1
0
0
25
50
75
Collector current: IC [A]
Gate resistance : Rg [Ω]
[ Inverter ]
Switching loss vs. gate resistance (typ.)
Vcc=600V，Ic=50A，VGE=±15V
[ Inverter ]
Reverse bias safe operating area (max.)
+VGE=15V,-VGE <= 15V, RG >= 15Ω ,Tj <= 125°C
5
75
Eoff(150°C)
Eoff(125°C)
4
3
Collector current: IC [A]
Switching loss : Eon, Eoff, Err [mJ/pulse ]
10
[ Inverter ]
Switching loss vs. Collector current (typ.)
Vcc=600V，VGE=±15V，Rg=15Ω
Switching loss : Eon, Eoff, Err [mJ/pulse]
Switching time : ton, tr, toff, tf [ nsec]
[ Inverter ]
Switching time vs. gate resistance (typ.)
Vcc=600V，Ic=50A，VGE=±15V，Tj= 125°C
1000
toff
Eon(150°C)
Eon(125°C)
2
Err(150°C)
Err(125°C)
1
50
RBSOA
(Repetitive pulse)
25
0
0
10
100
0
1000
400
800
1200
Collector-Emitter voltage : VCE [V]
Gate resistance : Rg [Ω]
4
1600
6MBI50VA-120-50
[ Inverter ]
Reverse recovery current : Irr [ A ]
Reverse recovery time : trr [ nsec ]
[ Inverter ]
Forward current vs. forward on voltage (typ.)
chip
50
Forward current : IF [A]
IGBT Modules
Tj=25°C
40
Tj=150°C
30
Tj=125°C
20
10
0
0
2
1
3
4
1000
Reverse recovery characteristics (typ.)
Vcc=600V，VGE=±15V，Rg=38Ω
trr(150°C)
trr(125°C)
100
Irr(150°C)
Irr(125°C)
10
5
0
25
10.00
Transient thermal resistance (max.)
100
FWD[Inverter]
1.00
IGBT[Inverter]
0.10
0.01
0.001
0.010
0.100
50
75
Forward current : I F [A]
Resistance : R [kΩ]
Thermal resistanse : Rth(j-c) [ °C/W ]
Forward on voltage : VF [V]
10
1
0.1
1.000
[ Thermistor ]
Temperature characteristic (typ.)
-60
-40
-20
0
20
40
60
80
100 120 140 160 180
Temperature [°C ]
Pulse width : Pw [sec]
Outline Drawings, mm
5
6MBI50VA-120-50
IGBT Modules
WARNING
1. This Catalog contains the product specifications, characteristics, data, materials, and structures as of October 2008.
The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this
Catalog, be sure to obtain the latest specifications.
2. All applications described in this Catalog exemplify the use of Fuji's products for your reference only. No right or license, either
express or implied, under any patent, copyright, trade secret or other intellectual property right owned by Fuji Electric Device
Technology Co., Ltd. is (or shall be deemed) granted. Fuji Electric Device Technology Co., Ltd. makes no representation or
warranty, whether express or implied, relating to the infringement or alleged infringement of other's intellectual property rights which
may arise from the use of the applications described herein.
3. Although Fuji Electric Device Technology Co., Ltd. is enhancing product quality and reliability, a small percentage of semiconductor
products may become faulty. When using Fuji Electric semiconductor products in your equipment, you are requested to take
adequate safety measures to prevent the equipment from causing a physical injury, fire, or other problem if any of the products
become faulty. It is recommended to make your design fail-safe, flame retardant, and free of malfunction.
4. The products introduced in this Catalog are intended for use in the following electronic and electrical equipment which has
normal reliability requirements.
• Computers
• OA equipment
• Communications equipment (terminal devices)
• Measurement equipment
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• Electrical home appliances
• Personal equipment
• Industrial robots etc.
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below, it is imperative to contact Fuji Electric Device Technology Co., Ltd. to obtain prior approval. When using these products for
such equipment, take adequate measures such as a backup system to prevent the equipment from malfunctioning even if a Fuji's
product incorporated in the equipment becomes faulty.
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• Gas leakage detectors with an auto-shut-off feature
• Emergency equipment for responding to disasters and anti-burglary devices
• Safety devices
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6. Do not use products in this Catalog for the equipment requiring strict reliability such as the following and equivalents to strategic
equipment (without limitation).
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7. Copyright ©1996-2008 by Fuji Electric Device Technology Co., Ltd. All rights reserved.
No part of this Catalog may be reproduced in any form or by any means without the express permission of Fuji Electric Device
Technology Co., Ltd.
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Neither Fuji Electric Device Technology Co., Ltd. nor its agents shall be liable for any injury caused by any use of the products not in
accordance with instructions set forth herein.
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