Inkjet printing of organic field-effect transistors using biocellulose derivative materials
A. T. Pereiraa, Q. Ferreiraa, E. Pecorarob, Carmen S.R. Freirec, Carlos Pascoal Netoc, Armando J.D. Silvestrec, Eliane Trovattic,
Susana C.M. Fernandesc, J. Morgadoa,d, L. Alcacera
a, Instituto de Telecomunicações, Instituto Superior Técnico, Torre Norte, Piso 9, Av. Rovisco Pais, 1, 1049-001 Lisboa, Portugal
b, Instituto de Telecomunicações, Universidade de Aveiro, Campus Universitário de Santiago, 3810-193 Aveiro, Portugal
c, CICECO, University of Aveiro, Campus Universitário de Santiago, 3810-193 Aveiro, Portugal
d, Instituto Superior Técnico, Departamento de Engenharia Química e Biológica, 1049-001 Lisboa, Portugal
[email protected]
Biocellulose (BC) is a pure form of cellulose and was naturally produced from the bacteria Glucanacetobacter xylinus[1]. BC based materials
are being studied for applications in organic electronics, both as substrate and as dielectric. The electric properties of BC compare well with
the commonly used substrate materials poly(ethylene naphtalate) (PEN) and poly(ethylene terephtalate) (PET). BC has a low coefficient of
thermal expansion (0.1-6 ppm/°C), it is stable upon 260 °C and its dielectric constant is in the range of k = 1.6 − 1.9[2]. BC has also the
advantages of being renewable and biodegradable.
Inkjet printing of electronics permits low cost and large area fabrication and it is compatible with flexible substrates, such as BC. Inkjet
printing is being used to print transistors arrays with small dimensions and high yield [3]. In this work inkjet printing of organic field-effect
transistors (OFET) using BC based materials is being developed. The OFETs are fabricated using inkjet-printed silver gate and source-drain
electrodes. A chitosan-bacterial cellulose composite deposited by spin-coating, is used as dielectric. Inkjet-printed poly(9,9-dioctylfuoreneco-bithiophene) (F8T2) is used as semiconductor. A scheme of the structure of the fabricated OFET is shown in Fig. 1. All the fabrication
processes were performed using a maximum temperature of 150 °C at ambient atmosphere. The performance and stability of inkjet
fabricated OFETs are compared with those of similar OFETs fabricated using traditional fabrication methods, namely, thermal evaporation
of electrodes and spin-coating of the semiconductor [2].
Acknowledgments: We thank FCT for financial support under the contracts PTDC/CTM/102144/2008 and PTDC/FIS/72831/2006.
Referências
[1] É. Pecoraro, D. Manzani, Y. Messaddeq, S. J. L. Ribeiro, in Monomers, Polymers and Composites from Renewable
Resources, (Eds: B. Mohamed Naceur, G. Alessandro), Elsevier, Amsterdam 2007, 369.
[2] L. Alcácer, J. Morgado, Q. Ferreira, É. Pecoraro, C. P. Neto, A. J. D. Silvestre, C. S. R. Freire, E. Trovatti, S. C. M.
Fernandes, in EUROCON 2011, Lisboa 2011.
[3] H. Y. Tseng, V. Subramanian, Organic Electronics 2011, 12, 249.
Fig. 1: Side view of the OFET structure
fabricated on a BC derivative substrate.
Channel length is ~ 100 μm.